unisonic technologies co., ltd mmbta92 pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r206-005,d high voltage pnp transistor ? description the utc mmbta92 are high voltage pnp transistors, designed for telephone signal switching and for high voltage amplifier. ? features * high collector-emitter voltage: v ceo =-300v * collector dissipation: p c(max) =350mw lead-free: mmbta92l halogen-free:mmbta92g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbta92-ae3-r mmbta92l-ae3-r MMBTA92G-AE3-R sot-23 e b c tape reel ? marking
mmbta92 pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-005,d ? absolute maximum ratings (operating temperature range applies unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5 v collector current i c -500 ma ta=25c 350 mw t c =25c 1.5 w collector dissipation derate above ta > 25c p c 12 mw/c junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -300 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -300 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-200v, i e =0 -0.25 a emitter cut-off current i ebo v eb =-3v, i c =0 -0.10 a v ce =-10v, i c =-1ma 60 v ce =-10v, i c =-10ma 80 dc current gain (note) h fe v ce =-10v, i c =-30ma 80 collector-emitter satu ration voltage v ce(sat)1 i c =-20ma, i b =-2ma -0.5 v base-emitter satura tion voltage v be(sat)1 i c =-20ma, i b =-2ma -0.90 v current gain bandwidth product f t v ce =-20v, i c =-10ma, f=100mhz 50 mhz collector base capacitance c cb v cb =-20v, i e =0, f=1mhz 6 pf note: pulse test: pw < 300 s, duty cycle < 2%, v ce(sat)1 < 200mv (class sin)
mmbta92 pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-005,d ? typical characteristics dc current gain, h fe collector current, i c (ma) dc current gain collector current, i c (ma) saturation voltage v ce(sat), v be(sat) (mv) v ce =-10v v ce(sat) v be(sat) i c =10*i b 10 3 10 2 10 1 10 0 -10 0 -10 1 -10 2 -10 3 -10 4 -10 3 -10 2 -10 1 -10 4 -10 0 -10 1 -10 2 -10 3 -10 4 collector-base voltage(v) c ib (pf), c cb (pf) capacitance c ib collector current, i c (ma) current gain bandwidth product (mhz) current gain bandwidth product c cb 10 2 10 1 -10 -1 -10 0 -10 1 -10 2 v ce =-20v f=100mhz -10 0 -10 1 -10 2 10 3 10 2 10 1 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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